1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . PMV16UN 20 v, 5.8 a n-channel trench mosfet rev. 1 ? 4 april 2011 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j =25c --20v v gs gate-source voltage -8 - 8 v i d drain current v gs =4.5v; t amb =25c [1] --5.8a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =5.8a; t j =25c - 1518m ? product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV16UN 20 v, 5.8 a n-channel trench mosfet 2. pinning information 3. ordering information 4. marking [1] % = placeholder for manufacturing site code table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 s d g mbb076 table 3. ordering information type number package name description version PMV16UN to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV16UN kv% product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV16UN 20 v, 5.8 a n-channel trench mosfet 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j =25c - 20 v v gs gate-source voltage -8 8 v i d drain current v gs =4.5v; t amb =25c [1] -5.8a v gs =4.5v; t amb =100c [1] -3.6a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 25 a p tot total power dissipation t amb =25c [2] - 510 mw [1] - 930 mw t sp = 25 c - 4170 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] -1a product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV16UN 20 v, 5.8 a n-channel trench mosfet 6. characteristics table 6. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 20--v v gsth gate-source threshold voltage i d =250a; v ds =v gs ; t j =25c 0.4 0.7 1 v i dss drain leakage current v ds =20v; v gs =0v; t j =25c --1a v ds =20v; v gs =0v; t j =150c --20a i gss gate leakage current v gs =8v; v ds =0v; t j = 25 c - - 100 na v gs =-8v; v ds =0v; t j = 25 c - - 100 na r dson drain-source on-state resistance v gs =4.5v; i d = 5.8 a; t j = 25 c - 15 18 m ? v gs =4.5v; i d = 5.8 a; t j =150c - 2328m ? v gs =2.5v; i d = 5.1 a; t j = 25 c - 18 23 m ? v gs =1.8v; i d = 3.9 a; t j = 25 c - 25 40 m ? g fs forward transconductance v ds =5v; i d =3a; t j =25c - 18 - s dynamic characteristics q g(tot) total gate charge i d =3a; v ds =10v; v gs =4.5v; t j =25c -7.411nc q gs gate-source charge - 1 - nc q gd gate-drain charge - 1.9 - nc c iss input capacitance v gs =0v; v ds =10v; f=1mhz; t j =25c - 670 - pf c oss output capacitance - 195 - pf c rss reverse transfer capacitance -85-pf t d(on) turn-on delay time v ds =10v; v gs =4.5v; r g(ext) =10 ? ; t j =25c; i d =5.8a -12-ns t r rise time - 40 - ns t d(off) turn-off delay time - 170 - ns t f fall time - 85 - ns source-drain diode v sd source-drain voltage i s =1a; v gs =0v; t j =25c - 0.7 1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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